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MITSUBISHI SEMICONDUCTORS
M63954P
HIGH VOLTAGE HALF BRIDGE DRIVER
DESCRIPTION M63954P is high voltage integrated circuit designed for electronic ballast, Power MOSFET and IGBT module driver for half bridge applications.
PIN CONFIGURATION (TOP VIEW)
FEATURES FLOATING SUPPLY VOLTAGE ................................. 600V OUTPUT CURRENT ............................................. 500mA HALF BRIDGE DRIVER BUILT-IN OSCILLATOR DIP_16 PACKAGE BUILT-IN REGULATOR
VREG 1 VCO 2 CVCO 3 RVCO 4 AB 5 ABTH
6
16 15 14 13 12 11 10 9
CNT OV GND LO VCC HVCC HO HGND
M63954P
LNTH 7
APPLICATIONS The M63954P can be used for fixed or continuous lamp control of fluorescent lamp inverter.
LN
8
PACKAGE TYPE 16P4
BLOCK DIAGRAM
CVCO
3 4
RVCO
11 HVCC
VCO 2
+ -
0.652VVREG
- + + -
0.773VVREG
SQ RQ
Dead Time
Level Shift
SQ R 10 HO 9 HGND
VREG 1
13 LO VREG VREG START
LN 8 LNTH 7
- +
DELAY
QS R
DELAY
+ - + -
5 AB 6 ABTH 15 OV
VCC 12
UV
DELAY
QS R
DELAY
1/2VREG 14 GND
CNT 16
+ -
DELAY
Sep. 2000
MITSUBISHI SEMICONDUCTORS
M63954P
HIGH VOLTAGE HALF BRIDGE DRIVER
ABSOLUTE MAXIMUM RATINGS
Symbol HGND HVCC VCC VOV VAB IAB VABTH VLN ILN VLNTH VVCO IHO ILO Pt Kq Rth(j-c) Tj Topr Tstg Parameter High Side Floating Supply Offset Voltage High Side Floating Supply Voltage Low Side Fixed Supply Voltage OV Input Voltage AB Input Voltage AB Input Current ABTH Input Voltage LN Input Voltage LN Input Current LNTH Input Voltage VCO Input Voltage High Side Output Current Low Side Output Current Package Power Dissipation Linear Derating Factor Junction-Case Thermal Resistance Junction Temperature Operation Temperature Storage Temperature Ta = 25C, On Board Ta > 25C, On Board Conditions HGND=GND Ratings 600 -0.5~+20 -0.5~+20 -0.5 ~ VCC+0.5 -0.5 ~ VCC+1.0 2 -0.5 ~ VCC+0.5 -0.5 ~ VCC+1.0 2 -0.5 ~ VCC+0.5 -0.5 ~ VCC+0.5 500 500 1.56 12.5 25 150 -20 ~ +80 -40 ~ +125 Unit V V V V V mA V V mA V V mA mA W mW/C C/W C C C
ELECTRICAL CHARACTERISTICS (Ta=25C, GND=HGND, VCC=HVCC=15V, unless otherwise specified)
Symbol HVCC VCC VREG ICC1 ICC2 ICC3 ICC4 VUVr VUVt tUV VOV tOV IOV fVCO fO VVCO IVCO VCVCO ICVCO IrRVCO VSRVCO Parameter High Side Floating Supply Voltage Low Side Fixed Supply Voltage Internal Supply Voltage Standby Current ON Suspension Oscillate Current ON Oscillation Current (50Hz) ON Oscillation Current (115kHz) VCC UV Reset Voltage VCC UV Trip Voltage VCC Supply UV Filter Time OV Protection Vth OV Filter Time OV Input Leak Current VCO Frequency Set Up Limit Output Frequency Set Up Limit VCO Input Voltage Limit VCO Input Leak Current CVCO Input Voltage CVCO Input Leak Current RVCO Leak Current RVCO Saturation Voltage VVCO=0V VREG=7.2V VCVCO=0V, VVCO >VCVCO VCVCO=0V, VREG=7.2V, VRVCO=10V VCVCO=6V, VREG=7.2V, IRVCO=10mA VOV=0V LO, HO VCC=15V, NO Load VCC=15V, CNT=5V, OV=5V VCC=15V, CNT=0V VCC=15V, RVCO1=15k, VVCO=0.33VREG RVCO2=39k, CVCO=100pF, VVCO=0.42VREG Test conditions HVCC-HGND Limits Min. 13 13 6.9 -- -- 2.0 2.0 9.0 5.5 14 3.4 30 -0.5 -- -- 1.5 -2 5.5 -2 -- -- Typ. 15 15 7.2 0.75 2.0 5.0 8 10 6.5 -- 3.6 -- -0.08 -- -- -- -0.66 5.55 -0.66 -- -- Max. 17 17 7.5 1.0 4.0 8.0 12 11 7.5 100 3.8 150 -- 250 125 VREG-1.5 -- 5.6 -- 0.5 500 Unit V V V mA mA mA mA V V s V s A kHz kHz V A V A A mV
Sep. 2000
MITSUBISHI SEMICONDUCTORS
M63954P
HIGH VOLTAGE HALF BRIDGE DRIVER
ELECTRICAL CHARACTERISTICS (Ta=25C, GND=HGND, VCC=HVCC=15V, unless otherwise specified)
Symbol VLN VLNTH VLNIO ILN ILNTH ILNTHh tLN VAB VABTH VABIO IAB IABTH tAB VCNT VCNTh ICNT tCNT IRFC tDEAD VHOH1 VHOH2 VHOH3 VHOL1 VHOL2 VHOL3 VLOH1 VLOH2 VLOH3 VLOL1 VLOL2 VLOL3 tr tf Parameter LN Input Voltage Limit LNTH Input Voltage Limit LN Offset Voltage LN Input Leak Current LNTH Input Leak Current LNTH Input Hysteresis Current LN Filter Time AB Input Voltage Limit ABTH Input Voltage Limit AB Offset Voltage AB Input Leak Current ABTH Input Leak Current AB Filter Time CNT Input Threshold Voltage CNT Input Hysteresis Voltage CNT Input Leak Current CNT Filter Time Floating Supply Leak Current Dead Time VHGND=600V C=1000pF IHO=0mA IHO=-20mA IHO=-200mA IHO=0mA IHO=20mA IHO=200mA ILO=0mA ILO=-20mA LO Output Voltage ILO=-200mA ILO=0mA ILO=20mA ILO=200mA Amplitude 10% Amplitude 90% 90%, C=1000pF 10%, C=1000pF VCNT=0V VABVABTH VLN>VLNTH VLN>VLNTH, VCC VLNTH, VLNTH=5V Test conditions Limits Min. 1.0 1.0 -50 -1 -1 20 14 0 0 -50 -0.5 -0.5 30 3.4 0.8 -0.5 30 -- 1.0 14 10 1.0 -- -- -- 14 10 1.0 -- -- -- -- -- Typ. -- -- -- -0.22 -0.22 40 -- -- -- -- -0.08 -0.08 -- 3.6 1.0 -0.08 -- -- -- 14.4 13 5.5 5 0.5 6 14.4 13 5.5 5 0.5 6 50 50 Max. VCC-1.5 VCC-1.5 50 -- -- 80 100 VREG-1.5 VREG-1.5 50 -- -- 150 3.8 1.2 -- 150 1.0 1.9 -- -- -- 100 1.0 12 -- -- -- 100 1.0 12 120 120 Unit V V mV A A A s V V mV A A s V V A s A s V V V mV V V V V V mV V V ns ns
HO Output Voltage
OUTPUT FREQUENCY (RVCO1=15k, RVCO2=15k, CVCO=100pF)
Oscillation Frequency 50kHz 60kHz VCO Input Voltage 0.33VREG 0.42VREG Min. -- -- Typ. 50 60 Max. -- -- Unit kHz kHz
Output Rise Time Output Fall Time
Sep. 2000
MITSUBISHI SEMICONDUCTORS
M63954P
HIGH VOLTAGE HALF BRIDGE DRIVER
DEAD TIME
90%
HO tDEAD LO 90%
10% tDEAD
10%
OUTPUT RISE TIME FALL TIME
90%
90%
10% HO, LO tr tf
10%
Sep. 2000
MITSUBISHI SEMICONDUCTORS
M63954P
HIGH VOLTAGE HALF BRIDGE DRIVER
PERFORMANCE CURVES
Thermal Derating Factor Characteristic 2
ICC-VCC Characteristic 6 Frequency=115kHz 5
Power Dissipation Pt (W)
1.5 4
ICC (mA)
On Board 1
Frequency=50kHz 3 2 Oscillation suspended Standby
0.5 1 0 Non Board 0 25 50 75 100 125 150 0
8
13 VCC (V)
18
23
Ambient Temperature Ta (C)
VREG-VCC Characteristic 8.0 1.5
tDEAD-VCC Characteristic
7.5
1.4 Oscillation suspended tDEAD1
tDEAD (s)
VREG (V)
1.3
7.0
Frequency=50kHz
1.2
tDEAD2
6.5
1.1
6.0
8
13 VCC (V)
18
23
1
8
13 VCC (V)
18
23
VLOH-VCC Characteristic 20 ILO=0mA ILO=-20mA 10
VLOL-VCC Characteristic
8
15
VLOH (V)
VLOL (V)
6 ILO=200mA 4
10 ILO=-200mA 5
2 ILO=20mA 0 8 13 VCC (V) 18 23 0 8 13 VCC (V)
Sep. 2000
18
ILO=0 23
MITSUBISHI SEMICONDUCTORS
M63954P
HIGH VOLTAGE HALF BRIDGE DRIVER
ICC-Ta Caracteristic 6 5 ICC4 4 VREG (V) ICC (mA) 3 2 1 0 -50 ICC2 ICC1 0 50 Ta (C) 100 150 7.05 7.00 -50 ICC3 7.35 7.30 7.25 7.20 7.15 7.10
VREG-Ta Characteristic
Oscillation suspended
Frequency=50kHz
0
50 Ta (C)
100
150
VUV-Ta Characteristic 12 VUVr 10 8 VUV (V) 6 4 2 0 -50 VUVt 1.90 1.80 1.70 tDEAD (s) 1.60 1.50 1.40 1.30 1.20 1.10 0 50 Ta (C) 100 150 1.00 -50
tDEAD-Ta Characteristic
tDEAD1
tDEAD2
0
50 Ta (C)
100
150
VLOH-Ta Characteristic 16 14 12 VLOH (V) 10 8 6 ILO=-200mA 4 2 0 -50 0 50 Ta (C) 100 150 ILO=0mA ILO=-20mA VLOL (V) 10 9 8 7 6 5 4 3 2 1 0 -50
VLOL-Ta Characteristic
ILO=200mA
ILO=20mA 0 50 Ta (C)
Sep. 2000
ILO=0mA 100 150
MITSUBISHI SEMICONDUCTORS
M63954P
HIGH VOLTAGE HALF BRIDGE DRIVER
PACKAGE OUTLINE
16P4
EIAJ Package Code DIP16-P-300-2.54 JEDEC Code - Weight(g) 1.0 Lead Material Alloy 42/Cu Alloy
Plastic 16pin 300mil DIP
16
9
1
8
D Symbol A A1 A2 b b1 b2 c D E e e1 L
A A2
L
e
b1
b
b2
A1
SEATING PLANE
Dimension in Millimeters Min Nom Max - - 4.5 0.51 - - - 3.3 - 0.4 0.5 0.6 1.4 1.5 1.8 0.9 1.0 1.3 0.22 0.27 0.34 18.8 19.0 19.2 6.15 6.3 6.45 - 2.54 - - 7.62 - 3.0 - - 0 - 15
e1
E
c
Sep. 2000

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